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FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET
May 2006
FRFET
FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET
Features
* 13A, 500V, RDS(on) = 0.54 @VGS = 10 V * Low gate charge (typical 43 nC) * Low Crss (typical 20pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability * Fast recovery body diode (typical 100ns)
TM
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
D
G GDS
TO-220
FDP Series
GD S
TO-220F
FQPF Series
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current - Continuous (TC = 25C) - Continuous (TC = 100C) Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
(Note 2) (Note 1) (Note 1) (Note 3)
Parameter
FQP13N50CF
13 8
(Note 1)
FQPF13N50CF
500 13* 8* 52* 30 530 13 19.5 4.5
Unit
V A A A V mJ A mJ V/ns
- Pulsed
52
195 1.56 -55 to +150 300
48 0.39
W W/C C C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RJC RJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
FQP13N50CF
0.64 62.5
FQPF13N50CF
2.58 62.5
Unit
C/W C/W
(c) 2006 Fairchild Semiconductor Corporation
1
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FQP13N50CF / FQPF13N50CF Rev. A1
FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
FQP13N50CF FQPF13N50CF
Device
FQP13N50CF FQPF13N50CF
Package
TO-220 TO-220F
TC = 25C unless otherwise noted
Reel Size
-
Tape Width
-
Quantity
50 50
Electrical Characteristics
Symbol
Off Characteristics BVDSS BVDSS / TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr
Notes:
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Conditions
VGS = 0V, ID = 250A, TJ = 25C ID = 250A, Referenced to 25C VDS = 500V, VGS = 0V VDS = 400V, TC = 125C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 6.5A VDS = 40V, ID = 6.5A VDS = 25V, VGS = 0V, f = 1.0MHz
(Note 4)
Min
500 -----2.0 ------
Typ
-0.5 -----0.43 15 1580 180 20 25 100 130 100 43 7.5 18.5 ---100 0.35
Max Units
--10 100 100 -100 4.0 0.54 -2055 235 25 60 210 270 210 56 --13 52 1.4 160 -V V/C A A nA nA V S pF pF pF ns ns ns ns nC nC nC A A V ns C
On Characteristics
Dynamic Characteristics
Switching Characteristics VDD = 250V, ID = 13A RG = 25
(Note 4, 5)
------(Note 4, 5)
VDS = 400V, ID = 13A VGS = 10V
------
Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 13A VGS = 0V, IS = 13A dIF/dt =100A/s
(Note 4)
--
1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 5.6mH, IAS = 13A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 13A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics
FQP13N50CF / FQPF13N50CF Rev. A1
2
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FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
10
1
ID, Drain Current [A]
ID, Drain Current [A]
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top :
10
1
150 C -55 C
o
o
25 C
10
0
o
10
0
Notes : 1. 250s Pulse Test 2. TC = 25
Notes : 1. VDS = 40V 2. 250s Pulse Test
10
-1
10
-1
-1
10
10
0
10
1
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue
RDS(ON) [ ], Drain-Source On-Resistance
IDR, Reverse Drain Current [A]
1.5
VGS = 10V
10
1
1.0
10
0
VGS = 20V
0.5
Note : TJ = 25
150 25
-1
Notes : 1. VGS = 0V 2. 250s Pulse Test
0
5
10
15
20
25
30
35
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
12
3000
VGS, Gate-Source Voltage [V]
2500
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
VDS = 100V
10
VDS = 250V VDS = 400V
Ciss
Capacitance [pF]
2000
8
1500
Coss
6
1000
Crss
500
Notes ; 1. VGS = 0 V 2. f = 1 MHz
4
2
Note : ID = 13A
0 -1 10
0
10
0
10
1
0
10
20
30
40
50
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
FQP13N50CF / FQPF13N50CF Rev. A1
3
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FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2
Figure 8. On-Resistance Variation vs. Temperature
3.0
BVDSS, (Normalized) Drain-Source Breakdown Voltage
1.1
RDS(ON), (Normalized) Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
Notes : 1. VGS = 10 V 2. ID = 6.5 A
0.9
Notes : 1. VGS = 0 V 2. ID = 250 A
0.5
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9-1. Maximum Safe Operating Area for FQP13N50CF
10
3
Figure 9-2. Maximum Safe Operating Area for FQPF13N50CF
Operation in This Area is Limited by R DS(on)
10
3
10
2
Operation in This Area is Limited by R DS(on)
10 s
1
10
2
ID, Drain Current [A]
10
10
0
1ms 10ms 100ms DC
ID, Drain Current [A]
100 s
10 s 100 s
10
1
1ms 10ms 100ms
10
0
DC
* Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
10
-1
* Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
10
-1
10
-2
10
0
10
1
10
2
10
3
10
-2
VDS, Drain-SourceVoltage[V]
10
0
10
1
10
2
10
3
VDS, Drain-SourceVoltage[V]
Figure 10. Maximum Drain Current vs. Case Temperature
14 12
ID, Drain Current [A]
10 8 6 4 2 0 25
50
75
100
125
150
TC, Case Temperature [ ]
FQP13N50CF / FQPF13N50CF Rev. A1
4
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FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FQP13N50CF
10
0
D = 0 .5
Z JC(t), Thermal Response
0 .2
10
-1
0 .1 0 .0 5 0 .0 2 0 .0 1
N o te s : 1 . Z J C (t) = 0 .6 4 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t)
PDM
s in g le p u ls e
10
-2
t1
t2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11-2. Transient Thermal Response Curve for FQPF13N50CF
Z JC(t), Thermal Response
10
0
D = 0 .5 0 .2 0 .1 0 .0 5
N o te s : 1 . Z J C (t) = 2 .5 8 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t)
10
-1
0 .0 2 0 .0 1
PDM t1
s in g le p u ls e
t2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
FQP13N50CF / FQPF13N50CF Rev. A1
5
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FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FQP13N50CF / FQPF13N50CF Rev. A1
6
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FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FQP13N50CF / FQPF13N50CF Rev. A1
7
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FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET
Mechanical Dimensions
TO-220
9.90 0.20 1.30 0.10 2.80 0.10 (8.70) o3.60 0.10 (1.70) 4.50 0.20
1.30 -0.05
+0.10
9.20 0.20
(1.46)
13.08 0.20
(1.00)
(3.00)
15.90 0.20
1.27 0.10
1.52 0.10
0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]
10.08 0.30
18.95MAX.
(3.70)
(45 )
0.50 -0.05
+0.10
2.40 0.20
10.00 0.20
Dimensions in Millimeters
FQP13N50CF / FQPF13N50CF Rev. A1
8
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FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET
Mechanical Dimensions
(Continued)
TO-220F
3.30 0.10 10.16 0.20 (7.00) o3.18 0.10 2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
MAX1.47 9.75 0.30 0.80 0.10
(3 0 )
0.35 0.10 2.54TYP [2.54 0.20]
#1 0.50 -0.05 2.54TYP [2.54 0.20] 4.70 0.20
+0.10
2.76 0.20
9.40 0.20
Dimensions in Millimeters
FQP13N50CF / FQPF13N50CF Rev. A1
9
15.87 0.20
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FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FAST(R) ACExTM ActiveArrayTM FASTrTM BottomlessTM FPSTM Build it NowTM FRFETTM CoolFETTM GlobalOptoisolatorTM CROSSVOLTTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM i-LoTM ImpliedDisconnectTM EnSignaTM IntelliMAXTM FACTTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UniFETTM UltraFET(R) VCXTM WireTM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I19
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
10 FQP13N50CF / FQPF13N50CF Rev. A1
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